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Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor

机译：多台面沟道AlGaN / GaN高电子迁移率晶体管中几乎与温度无关的饱和漏极电流

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Tamura, Takahiro; Kotani, Junji; Kasai, Seiya; Hashizume, Tamotsu;
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年度 2008
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1. Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor [J] . Takahiro Tamura, Junji Kotani, Seiya Kasai, Applied physics express . 2008,第2期

机译：多台面沟道AlGaN / GaN高电子迁移率晶体管中的几乎与温度无关的饱和漏极电流
2. Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor [J] . Kota Ohi, Tamotsu Hashizume Japanese journal of applied physics . 2009,第8issue1期

机译：多台面沟道AlGaN / GaN高电子迁移率晶体管的漏极电流稳定性和阈值电压和亚阈值电流的可控性
3. Enhancement-Mode AlGaN/GaN Vertical Trench Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with a High Drain Current Fabricated Using the AlGaN Regrowth Technique [J] . Akio Yamamoto, Keito Kanatani, Norifumi Yoneda, Physica status solidi . 2020,第7期

机译：使用AlGaN再生技术制造的具有高漏极电流的增强型AlGaN / GaN垂直沟槽金属-绝缘体-半导体高电子迁移率晶体管
4. Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN high-electron-mobility transistor structures [C] . Yuya Yamaoka, Kazuhiro Ito, Akinori Ubukata, International Conference on Indium Phosphide & Related Materials;International Symposium on Compound Semiconductors;Compound Semiconductor Week . 2016

机译：Si上初始AlN成核层顶部的AlGaN缓冲层的Al含量与AlGaN / GaN高电子迁移率晶体管结构的垂直泄漏电流之间的关系
5. Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors. [D] . Ha, Minh-Trang Teresa. 2016

机译：在AlGaN / GaN高电子迁移率晶体管上进行等离子增强化学气相沉积的氮化硅钝化的热稳定性。
6. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors [O] . Huan-Yu Shih, Fu-Chuan Chu, Atanu Das, 2016

机译：AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
7. Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors [O] . Asubar, Joel T., Yatabe, Zenji, Hashizume, Tamotsu 2014

机译：降低AlGaN / GaN多金属通道高电子迁移率晶体管的热阻
8. Current Collapse Induced in AlGaN/GaN High-Electron-Mobility Transistors by Bias Stress; Journal article [R] . Mittereder, J. A., Binari, S. C., Klein, P. B., 2003

机译：偏压应力在alGaN / GaN高电子迁移率晶体管中引起的电流崩塌;杂志文章

Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor

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